亚化咨询:降低光致衰减(LID)助力PERC技术竞争力提升

亚化咨询:降低光致衰减(LID)助力PERC技术竞争力提升




光致衰减(Light Induced Degradation, LID)是指太阳电池及组件在光照过程中引起的功率衰减现象。一般认为,P型(掺硼)太阳电池光致衰减的主要原因,是在硅材料中必须硼和氧同时存在的情况下,光照或电流注入导致硼和氧形成硼氧(B-O)复合体。硼氧复合体是一种亚稳态缺陷
,形成了复合中心,从而降低了少数载流子寿命。


PERC技术是晶硅太阳电池近年来最具性价比的效率提升手段,PERC技术与常规电池生产线兼容性高,生产线改造投资低,效率提升效果明显。PERC技术的成功工业化应用,大大增强了P型晶硅的竞争力,推迟了N型晶硅的市场化进程


PERC结构电池LID相比普通晶硅太阳电池偏高,机理暂不明确,可能与电池的介质钝化膜有关,也可能与PERC电池更高的开路电压有关。高效PPERC电池光致衰减较高的问题,影响了PERC技术的竞争力针对LID的成因,业界开发了一系列解决方案,以减轻光致衰减。


1.
降低硅片中的氧含量。使用定向凝固法生长单晶可以有效地低氧含量,降低单晶的LID。磁控直拉硅单晶工艺也可以控制单晶硅中的氧浓度。


2.
使用镓元素替代部分硼元素,降低硼含量。虽然掺镓技术可以明显地降低光衰提升组件效率,但由于镓的低分凝系数,会导致硅片电阻率分布不均匀。通过热场改善和生产工艺的调整,可以有效降低镓分凝系数低带来的影响。


3.
光照条件下低温退火,可以使B-O复合体失效。同时制备介质钝化膜引入的氢原子也可以促进B-O复合体的失效。


公开信息显示,通过晶硅制造和电池片制造两道环节采取措施,目前一线晶硅太阳电池厂商已经能够将单晶PERCLID降至2%以内。亚化咨询认为,太阳电池行业应当持续推进降低LID技术的研发,并控制成本,方能促进PPERC电池市场份额不断提升


第二届PERC太阳电池技术与市场研讨会将于2016629日在江苏无锡召开。自太阳电池上下游产业链的150多家企业总计超过200位参会代表将齐聚一堂,共商产业现状和未来发展。PERC电池光致衰减(LID)解决方案将是会议探讨的重点内容。


                              



首届动力锂电能量密度与安全性研讨会将于201697日在山东青岛召开。会议将探讨国家十三五新能源汽车产业规划与补贴政策新能源汽车对动力锂电性能要求锂离子电池能量密度提升路线图,动力锂电制造工艺和材料选型对能量密度和安全性的影响,锂离子电芯与电池包的安全性设计与测试技术等。




会议临近,如有意向参会或者赞助此次会议,欢迎您和我们联系。负责人:陈小姐021-68726606-109/13701609248Emailjoanna_chen@chemweekly.com


ASIACHEM: Reduce LID Assists PERC TechnologyCompetitiveness Increase




LightInduced Degradation (LID) is solar cell and module’ power degradationphenomenon cause by under light process. It is generally believed that, P-type(boron doped) solar cell LID’s main reason is under boron and oxygen must existin the same time’s condition in silicon materials, lighting and electricityinstilling leads boron and oxygen forming B-O complex. B-O complex is a kind ofmetastable defect, it forms recombination center, which leads minority carriers’lives are reduced.


PERCis a most cost-effective technology for c-Si solar cell to enhance efficiencyin recent years. PERC technology has high compatibility with conventional solarcell production line, low product line transform investment, efficiencyincrease effect is obvious. Successful industrial application of PERC technology hasgreatly enhanced the competitiveness of P-type c-Si, delayed the market processof N-type c-Si.


However, PERC structure cell LID is higherthan normal c-Si. The mechanism is temporary not clear: it may be related to cell’sdielectric passivation film or the higher open circuit voltage of PERC cell. High efficiencyP-type PERC cell’s LID relatively higher problem influences PERC technology’scompetitiveness. Aiming at LID’s contributing factor, the industriesdevelop a series of solving methods to reduce LID.


1. Reduceoxygen content in silicon wafer. Use directional solidification method togrow monocrystalline to reduce its LID. Magnetically controlled direct pullingsilicon monocrystalline process can also control oxygen concentration in monocrystallinesilicon.


2. Usegallium to replace part of boron, reduce boron content. Although galliumdoped can obviously reduce LID and increase modules efficiency,gallium’s lowseparation coefficient will lead silicon wafer resistivity distribution uneven.According to thermal field improvement and production engineering’s adjustmentcan efficiently reduce influences cause by gallium low separation coefficient.


3. Lowtemperature annealing under light process can make B-O complex lose efficacy. Meanwhileprepare dielectric passivation film incoming hydrogen atom can also stimulateB-O complexlose efficacy.


Publicinformation shows that, through taking steps in c-Si and cell’s manufacture,currently first-line c-Si solar cell manufacturers have already makemonocrystalline PERC’s LID reduce to less than 2%. ASIACHEM believes that, solar cellindustry will continue move forward R&D on reducing LID technology, andcontrol the cost, which can promote P-type PERC market share continuesincrease.


2nd PERCSolar Cell Technology and Market Conferencewill be held in June 29 in Wuxi, Jiangsu, China. More than 150 companies from theindustrial chain of upstream and downstream with more than 200 delegates willgather in the upcoming event, to share the update and jointly discuss thefuture development of solar cell industry. The PERC Cell LID Solutions will be focused.



If you have interests,please kindly contact with us:

Joanna Chen

Tel: +86-21- 68726606-109

Email: Joanna.c@chemweekly.com

第二届PERC太阳电池技术与市场研讨会.pdf
(2016-04-26 09:55:03, Size: 472 KB, Downloads: 0)